DETERMINATION OF RANDOM AND ALIGNED STOPPING POWERS FOR 80-300 KEV PROTONS IN SILICON BY BACK-SCATTERING MEASUREMENTS.CEMBALI F; ZIGNANI F.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 31; NO 3; PP. 169-173; BIBL. 10 REF.Article

ELECTRICAL ACTIVATION PROCESSES OF P⁺ IONS CHANNELED ALONG THE (110) AXIS ON SILICON: EFFECT OF ANNEALING ON CARRIERS PROFILES SHAPE.CEMBALI F; GALLONI R; ZIGNANI F et al.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 26; NO 3; PP. 161-171; BIBL. 11 REF.Article

A TECHNIQUE TO OBTAIN DEEP PENETRATING OHMIC CONTACTS FOR ELECTRICAL MEASUREMENTS ON ION IMPLANTED SILICON.CEMBALI F; GALLONI R; ZIGNANI F et al.1974; J. PHYS. E; G.B.; DA. 1974; VOL. 7; NO 9; PP. 698-700; BIBL. 4 REF.Article

Stress distribution and lattice curvature determinations in multilayer structures by simulation of X-ray rocking curvesCEMBALI, F; SERVIDORI, M.Journal of applied crystallography. 1989, Vol 22, pp 345-351, issn 0021-8898, 4Article

Accuracy in X-ray Rocking-curve analysis as a necessary requirement for revealing vacancies and interstitials in regrown silicon layers amorphized by ion implantationSERVIDORI, M; CEMBALI, F.Journal of applied crystallography. 1988, Vol 21, Num 2, pp 176-181, issn 0021-8898Article

DOPING IN RADIATION DAMAGE PROFILES OF P⁺ IONS IMPLANTED IN SILICON ALONG THE (110) AXIS.CEMBALI F; GALLONI R; MOUSTY F et al.1974; RAD. EFFECTS.; G.B.; DA. 1974; VOL. 21; NO 4; PP. 255-264; BIBL. 28 REF.Article

3D DuMond diagrams of multi-crystal Bragg-case synchrotron topography. II. Curved sampleSERVIDORI, M; CEMBALI, F; MILITA, S et al.Applied physics. A, Materials science & processing (Print). 2001, Vol 73, Num 1, pp 83-90, issn 0947-8396Article

Double-crystal X-ray diffraction analysis of low-temperature ion implanted siliconCEMBALI, F; SERVIDORI, M; ZANI, A et al.Solid-state electronics. 1985, Vol 28, Num 9, pp 933-943, issn 0038-1101Article

3D DuMond diagrams of multi-crystal Bragg-case synchrotron topography. I. Flat sampleSERVIDORI, M; CEMBALI, F; MILITA, S et al.Applied physics. A, Materials science & processing (Print). 2001, Vol 73, Num 1, pp 75-82, issn 0947-8396Article

Influence of first-order approximations in the incidence parameter on the simulation of symmetric and asymmetric X-ray rocking curves of heteroepitactic structuresSERVIDORI, M; CEMBALI, F; FABBRI, R et al.Journal of applied crystallography. 1992, Vol 25, pp 46-51, issn 0021-8898, 1Article

Effect of diffuse scattering in the strain profile determination by double crystal X-ray diffractionCEMBALI, F; SERVIDORI, M; GABILLI, E et al.Physica status solidi. A. Applied research. 1985, Vol 87, Num 1, pp 225-233, issn 0031-8965Article

Double crystal X-ray observation of lattice strain induced by recoiled oxygen in through-oxide implanted siliconCEMBALI, F; MAZZONE, A. M; SERVIDORI, M et al.Radiation effects. 1985, Vol 87, Num 2, pp 83-89, issn 0033-7579Article

Monte Carlo simulation of channeling effects near the <100> axis in siliconMAZZONE, A. M; SERVIDORI, M; CEMBALI, F et al.Radiation effects. 1986, Vol 87, Num 4, pp 169-174, issn 0033-7579Article

Influence of damage depth profile on the characteristics of shallow p⁺/n implanted junctionsCEMBALI, F; SERVIDORI, M; LANDI, E et al.Physica status solidi. A. Applied research. 1986, Vol 94, Num 1, pp 315-319, issn 0031-8965Conference Paper

Characterization of lattice damage in ion implanted silicon: Monte Carlo simulation combined with double crystal X-ray diffractionCEMBALI, F; MAZZONE, A. M; SERVIDORI, M et al.Physica status solidi. A. Applied research. 1985, Vol 91, Num 2, pp K125-K127, issn 0031-8965Article

EFFECT OF LASER IRRADIATION ON THE CHARACTERISTICS OF IMPLANTED LAYERS FOR SILICON SOLAR CELLSZIGNANI F; GALLONI R; PEDULLI L et al.1979; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 2/1979/BERLIN; NLD/USA/GBR; DORDRECHT: D. REIDEL/BOSTON: D. REIDEL/LONDON: D. REIDEL; DA. 1979; PP. 213-221; BIBL. 9 REF.;_EUR-6376Conference Paper

Analysis of thin-film solid solutions on single-crystal silicon by simulation of x-ray rocking curves: B-Si and Ge-Si binary alloysFABBRI, R; CEMBALI, F; SERVIDORI, M et al.Journal of applied physics. 1993, Vol 74, Num 4, pp 2359-2369, issn 0021-8979Article

Two-stage recovery of lattice damage induced in silicon by ion implantation below amorphization threshold: analysis by simulation of X-ray rocking curvesFABBRI, R; SERVIDORI, M; ZANI, A et al.Physica status solidi. A. Applied research. 1989, Vol 115, Num 2, pp 437-444, issn 0031-8965, 8 p.Article

Iron contamination in ion implanted silicon, as revealed by X-ray and electron diffractionSERVIDORI, M; CEMBALI, F; NEGRINI, P et al.Applied physics. A, Solids and surfaces. 1986, Vol 39, Num 3, pp 191-195, issn 0721-7250Article

Determination of dislocation loop size and density in ion implanted and annealed silicon by simulation of triple crystal X-ray rocking curvesZAUMSEIL, P; WINTER, U; CEMBALI, F et al.Physica status solidi. A. Applied research. 1987, Vol 100, Num 1, pp 95-104, issn 0031-8965Article

Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantationSOLMI, S; CEMBALI, F; FABBRI, R et al.Applied physics. A, Solids and surfaces. 1989, Vol 48, Num 3, pp 255-260, issn 0721-7250Article

Temperature and time dependence of dopant enhanced diffusion in self-ion implanted siliconANGELUCCI, R; CEMBALI, F; NEGRINI, P et al.Journal of the Electrochemical Society. 1987, Vol 134, Num 12, pp 3130-3134, issn 0013-4651Article

The problem of convolution in the simulation of multicrystal X-ray rocking curves of semiconductor materialsSERVIDORI, M; CEMBALI, F; ZAZZETTI, L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 523-526, issn 0921-5107Conference Paper

Influence of implant induced vacancies and interstitials on boron diffusion in siliconSOLMI, S; ANGELUCCI, R; CEMBALI, F et al.Applied physics letters. 1987, Vol 51, Num 5, pp 331-333, issn 0003-6951Article

Ambiguity in the strain profile determination by stimulation of double crystal X-ray rocking curvesCEMBALI, F; GABILLI, E; LOTTI, R et al.Physica status solidi. A. Applied research. 1986, Vol 96, Num 1, pp K31-K34, issn 0031-8965Article